CN

王来利

  • E-Mail: 
  • School/Department: 电气工程学院
  • Education Level: With Certificate of Graduation for Doctorate Study
  • Gender: Male
  • Degree: Doctor
  • Professional Title: Professor
  • Status: Employed
  • Supervisor of Doctorate Candidates: Yes
  • Supervisor of Master's Candidates: Yes

Patents

Current position: Home > Research > Patents

一种碳化硅MOSFET芯片双向开关功率模块及其制备方法

Release Time:2025-04-30
Hits:
Title:
一种碳化硅MOSFET芯片双向开关功率模块及其制备方法
Disigner of the Invention:
王来利 , 侯震鹏 , 孙立杰 , 赵成 , 裴云庆 , 杨旭 , 甘永梅 , 张虹
Type of Patent:
Invent
Application Number:
CN202110302888.4
Service Invention or Not:
No
Application Date:
2021-03-22
Date:
2025-04-30