An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery Over an Extremely Wide High-Temperature Range
Release Time:2025-04-30
Hits:
- Date:
- 2025-04-30
- Title of Paper:
- An Analytical Switching Loss Model for SiC MOSFET Considering Temperature-Dependent Reverse Recovery Over an Extremely Wide High-Temperature Range
- Journal:
- IEEE Transactions on Power Electronics
- Co-author:
- M. Zhu, Y. Pei, F. Yang, Z. Cheng, D. Ma and L. Wang
- Translation or Not:
- No
- Date of Publication:
- 2024-02-13