Papers

High-threshold-voltage and low-leakage-current of normally-off H-diamond FET with self-aligned Zr/ZrO2 gate

Release Time:2025-04-30
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Date:
2025-04-30
Title of Paper:
High-threshold-voltage and low-leakage-current of normally-off H-diamond FET with self-aligned Zr/ZrO2 gate
Journal:
Diamond and Related Materials
Co-author:
F Wang, GQ Chen, W Wang, MH Zhang, S He, GQ Shao, YF Wang, WB Hu, HX Wang*
Volume:
134
Page Number:
109774
Translation or Not:
No
Date of Publication:
2023-03-20