Compton Scattering Pinhole Imaging Technology for Measuring and Diagnosing Dose Field Intensity Distribution of Intense Pulse Gamma Ray Beams
发布时间：2025-04-30
点击次数：
- 发布时间：
- 2025-04-30
- 论文名称：
- Compton Scattering Pinhole Imaging Technology for Measuring and Diagnosing Dose Field Intensity Distribution of Intense Pulse Gamma Ray Beams
- 发表刊物：
- Publisher: IEEE
- 摘要：
- 1.Shaanxi Engineering Research Center of Controllable Neutron Source, School of Sciences,
Xijing University, Xi'an 710123, China.
2.College of Nuclear Science and Technology, Xi'an Jiaotong University, Xi'an 710049, China.
3.State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Northwest Institute
of Nuclear Technology), Xi’an, 710024, China.
Abstract—In the intense pulsed gamma radiation environment (dose rate>1GGy (SI)/s,
FWHM10-20ns), the damage of electronic devices and systems exhibits a strong dose rate effect.
The dose field distribution of the intense pulse gamma-ray beam generated by the "Qiang guang
1"accelerator is an urgent problem to be solved. It is the premise of carrying out the experiment
of high dose rate effect to obtain the distribution information of strong dose field accurately and
quickly. In this paper, we present a method for the problem based on the Compton scattering
method: placing a target near the exit and using a pinhole imaging system, the scattered gamma
intensity distribution at the thin target is reconstructed, and then the intensity distribution of the
dose field of the strong pulsed gamma ray beam at the thin target is given.
Key words—Qiang guang 1; dose rate effect; pulse radiation; transfer matrix; reconstruction
Published in: 2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)
Date of Conference: 29-31 May 2019
Date Added to IEEE Xplore: 24 September 2020
ISBN Information:
INSPEC Accession Number: 20005125
Publisher: IEEE
Conference Location: Chongqing, China
DOI: 10.1109/ICREED49760.2019.9205167
- 合写作者：
- Zheng Xiaohai; Hu Huasi; Sun Jianfeng; Li Zhongliang; Cai Dan; Wang Jinhua
- 卷号：
- 2019 3rd International Conference on Radiation Effects of Electronic Devices (ICREED)
- 页面范围：
- 1-4
- 是否译文：
- 否
- 发表时间：
- 2019-05-29