Tunable Ohmic, p‑Type Quasi-Ohmic, and n‑Type Schottky Contacts of Monolayer SnSe with Metals

Release Time:2025-04-30  Hits:

• Date:2025-04-30
• Title of Paper:Tunable Ohmic, p‑Type Quasi-Ohmic, and n‑Type Schottky Contacts of Monolayer SnSe with Metals
• Journal:ACS Appl. Nano Mater.
• Summary:Monolayer (ML) SnSe, a p-type IV−VI semiconductor, has
  drawn tremendous attention because of its chemical stability, high
  electrostatic gating efficiency, and carrier mobility, and it has been
  synthesized in different ways. We have comprehensively investigated the
  properties of the interfaces between ML SnSe and some regular metals by
  using first-principles calculations. Metallization of ML SnSe appears in ML
  SnSe−Ag, −Al, −Au, −Cu, and −Cr systems. Lateral n-type Schottky
  contacts with electron Schottky barrier heights of 0.42 and 0.32 eV are
  formed, respectively, when ML SnSe contacts with metals Ag and Al. Also, a
  lateral p-type quasi-ohmic contact with a hole Schottky barrier height of
  0.02 eV is formed when ML SnSe contacts with metal Au. Surprisingly, ohmic contacts are formed when ML SnSe contacts with
  metals Cr and Cu. Our research not only has a deep understanding of the characteristics of the interfaces between ML SnSe and
  the metals but also offers a reference in the electrode selection for ML SnSe devices.
• Co-author:Cheng He, Ming Cheng, Tongtong Li, and Wenxue Zhang
• Volume:2019, 2, 2767−2775
• Page Number:2019, 2, 2767−2775
• Translation or Not:No
• Date of Publication:2019-05-01