Papers
Release Time: 2025-04-30Hits:
- Date:2025-04-30
- Title of Paper:Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)
- Journal:Applied Physics Letters
- Summary:In this letter, we explore in detail the potential of nanoheteroepitaxy to controllably fabricate high
quality GeSn nano-structures and to further improve the crystallinity of GeSn alloys directly grown
on Si(001). The GeSn was grown by molecular beam epitaxy at relatively high temperatures up to
750 C on pre-patterned Si nano-pillars embedded in a SiO2 matrix. The best compromise between
selective GeSn growth and homogenous Sn incorporation of 1.4% was achieved at a growth temperature
of 600 C. X-ray diffraction measurements confirmed that our growth approach results in
both fully relaxed GeSn nano-islands and negligible Si interdiffusion into the core of the nanostructures.
Detailed transmission electron microscopy characterizations show that only the small GeSn/
Si interface area reveals defects, such as stacking faults. Importantly, the main part of the GeSn
islands is defect-free and of high crystalline quality. The latter was further demonstrated by photoluminescence
measurements where a clear redshift of the direct CC-CV transition was observed
with increasing Sn content. - Co-author:Viktoria Schlykow, Wolfgang M. Klesse, Gang Niu*, Noriyuki Taoka, Yuji Yamamoto,
- Volume:109
- Page Number:202102
- Translation or Not:No
- Date of Publication:2016-11-14
