Papers
Release Time: 2025-04-30Hits:
- Date:2025-04-30
- Title of Paper:Growth temperature dependence of epitaxial Gd2O3 films on Si(111)
- Journal:Microelectronic Engineering
- Summary:This article reports on the epitaxy of crystalline high κ oxide Gd2O3 layers on Si(1 1 1) for CMOS gate application. Epitaxial Gd2O3 thin films have been grown by Molecular Beam Epitaxy (MBE) on Si(1 1 1) substrates between 650 and 750 °C. The structural and electrical properties were investigated depending on the growth temperature. The C–V measurements reveal that equivalent oxide thickness (EOT) equals 0.7 nm for the sample deposited at the optimal temperature of 700 °C with a relatively low leakage current of 3.6 × 10−2 A/cm2 at |Vg − VFB| = 1 V.
- Co-author:G. Niu · B. Vilquin · N. Baboux · [...]
- Translation or Not:No
- Date of Publication:2009-07-01
