Papers
Release Time: 2025-04-30Hits:
- Date:2025-04-30
- Title of Paper:Epitaxial growth of germanium on silicon using a Gd2O3/Si (111) crystalline template
- Journal:Journal of Vacuum Science & Technology A
- Summary:This work presents a study of the epitaxial growth of Ge on Si (111) using a Gd <sub>2</sub> O <sub>3</sub> crystalline template. A smooth two-dimensional Ge layers is obtained from the coalescence of initially three-dimensional Ge islands grown in the Volmer–Weber mode. Ge takes its bulk lattice parameter at the very early stages of its growth. A detailed x-ray pole figure analysis reveals that the epitaxial relationship between the layers and the Si substrate is [1–10] Ge (111)||[-110] Gd <sub>2</sub> O <sub>3</sub>(111)||[1–10] Si (111) and that microtwins are formed in the Ge layer.
- Co-author:G. Niu · L. Largeau · G. Saint-Girons · [...]
- Translation or Not:No
- Date of Publication:2010-10-01
