EN 登录

李飞

教授 博士生导师 硕士生导师

个人信息
Personal Information
  • 电子邮箱:
  • 学历: 硕博连读
  • 学位: 博士
  • 职称: 教授
  • 毕业院校: 西安交通大学
  • 学科: 电子科学与技术

论文成果

当前位置: 中文主页 > 科学研究 > 论文成果

Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb+In) co-doped TiO2 ceramics

发布时间:2025-04-30
点击次数:
发布时间:
2025-04-30
论文名称:
Evidences of grain boundary capacitance effect on the colossal dielectric permittivity in (Nb+In) co-doped TiO2 ceramics
发表刊物:
Scientific Reports
摘要:
The (Nb 1 In) co-doped TiO2 ceramics were synthesized by conventional solid-state sintering (CSSS) and spark plasma sintering (SPS) methods. The phases and microstructures were studied by X-ray diffraction, Raman spectra, field-emission scanning electron microscopy and transmission electron microscopy, indicating that both samples were in pure rutile phase while showing significant difference in grain size. The dielectric and I–V behaviors of SPS and CSSS samples were investigated. Though both possess colossal permittivity (CP), the SPS samples exhibited much higher dielectric permittivity/loss factor and lower breakdown electric field when compared to their CSSS counterparts. To further explore the origin of CP in co-doped TiO2 ceramics, the I–V behavior was studied on single grain and grain boundary in CSSS sample. The nearly ohmic I–V behavior was observed in single grain, while GBs showed nonlinear behavior and
much higher resistance. The higher dielectric permittivity and lower breakdown electric field in SPS
samples, thus, were thought to be associated with the feature of SPS, by which reduced space charges and/or
impurity segregation can be achieved at grain boundaries. The present results support that the grain
boundary capacitance effect plays an important role in the CP and nonlinear I–V behavior of (Nb 1 In)
co-doped TiO2 ceramics.
合写作者:
Li J, Li Fei, Li C, et al
卷号:
volume 5
页面范围:
8295
是否译文:
发表时间:
2015-02-06